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[Analysis Case] Evaluation of Carrier Distribution in Near-Infrared VCSEL Using SMM

We can consistently perform everything from disassembly and processing of the implemented product to measurement of the diffusion layer.

We disassembled a near-infrared VCSEL (vertical-cavity surface-emitting laser) implementation to extract a tiny chip, and after cross-section processing, we conducted SMM measurements. A high-resistance current confinement layer was observed surrounding the aperture of the VCSEL. Additionally, near the active layer, films of different materials were stacked, and this composition was measured as a contrast. Contrast was also confirmed within layers of the same composition, which is believed to reflect differences in carrier concentration and band bending.